AP60H10NF

100V N+N-Channel Enhancement Mode MOSFET

AP60H10NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250uA, VGS = 0V

100

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS = 0V

1.0

uA

IGSS

Gate-Body Leakage Current

VDS=0V, VGS=±20V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1.2

1.6

2.5

V

RDS(ON)

Static Drain-Source ON-Resistance

VGS=10V, ID=10A

9.5

12

mΩ

VGS=4.5V, ID=6A

12

15

mΩ

gFS

Forward Transconductance

VDS=5V, ID=20A

48

S

Ciss

Input Capacitance

VGS=0V, VDS=50V,

f=1MHz

1372

pF

Coss

Output Capacitance

291

pF

Crss

Reverse Transfer Capacitance

2.0

pF

Rg

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

2.0

Ω

Qg

Total Gate Charge (@ VGS = 10V)

VGS=0 to 10V

VDS=50V, ID=10A

21

nC

Qg

Total Gate Charge (@ VGS = 6.0V)

13.9

nC

Qgs

Gate Source Charge

5.4

nC

Qgd

Gate Drain Charge

5.5

nC

tD(on)

Turn-On DelayTime

VGS=10V, VDS=50V

RL=2.5Ω, RGEN=6Ω

10.7

ns

tr

Turn-On Rise Time

20

ns

tD(off)

Turn-Off DelayTime

25

ns

tf

Turn-Off Fall Time

19.5

ns

trr

Body Diode Reverse Recovery Time

IF=20A, dIF/dt = 100A/us

48

ns

Qrr

Body Diode Reverse Recovery Charge

IF=20A, dIF/dt = 100A/us

79

nC

IS

Diode Continuous Current

TC = 25°C

63

A

VSD

Diode Forward Voltage

IS = 1A, VGS = 0V

0.7

1.0

V

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.1mH, IAS=24A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.