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AP60N03DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP60N03DF
Description  30V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP60N03DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP60N03DF
30V N-Channel Enhancement Mode MOSFET
AP60N03DF RVE1.2
永源微电子科技有限公司
Description
The AP60N03DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =60A
RDS(ON) < 8.5mΩ @ VGS=10V （Type：6.0mΩ）
Application
VBUS
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP60N03DF
PDFN3*3-8L
AP60N03DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
60
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
29
A
IDM
Pulsed Drain Current2
92
A
EAS
Single Pulse Avalanche Energy3
57.8
mJ
IAS
Avalanche Current
34
A
PD@TC=25
℃
Total Power Dissipation4
29
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
62.5
℃/W
RθJC
Thermal Resistance Junction-Case1
4.32
℃/W


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