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AP60N04DF Datasheet(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP60N04DF Datasheet(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 7 page ![]() AP60N04DF 40V N-Channel Enhancement Mode MOSFET AP60N04DF Rve1.0 臺灣永源微電子科技有限公司 0 30 60 90 120 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 8 12 16 20 2 4 6 8 10 VGS (V) ID=12A 0 2 4 6 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 2 4 6 8 10 0 5 10 15 20 25 QG , Total Gate Charge (nC) VDS=20V ID=12A 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ |
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