AP60N06NF datasheet(1/7 Pages) APME

Part #	AP60N06NF

Description	65V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP60N06NF

65V N-Channel Enhancement Mode MOSFET

AP60N06NF REV1.0

永源微電子科技有限公司

Description

The AP60N06NF uses advanced APM-SGTⅠⅠtechnology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 65V ID =60A

RDS(ON) < 13mΩ @ VGS=10V (Type：9.5mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60N06NF

PDFN5*6-8L

AP60N06NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current1,6

60

A

ID@TC=100

℃

Continuous Drain Current1,6

24

A

IDM

Pulsed Drain Current2

180

A

EAS

Single Pulse Avalanche Energy3

20

mJ

PD@TC=25

℃

Total Power Dissipation4

31

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

4.0

℃/W

RθJC

Thermal Resistance Junction-Case1

85

℃/W

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AP60N06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP60N06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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