AP60P02BD

-20V P-Channel Enhancement Mode MOSFET

AP60P02BD REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID= -250μA

-20

-22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-0.45

-0.65

-1.0

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=-4.5V, ID=-15A

-

6.1

8.0

mΩ

VGS=-2.5V, ID=-12A

-

8.8

11

Rg

Gate Resistance

VDS=0V, VGS=0V,f=1MHz

---

9

13

Ω

Ciss

Input Capacitance

VDS=-10V, VGS=0V,

f=1.0MHz

-

2700

-

pF

Coss

Output Capacitance

-

450

-

pF

Crss

Reverse Transfer Capacitance

-

420

-

pF

Qg

Total Gate Charge

VDS=-10V, ID=-15A,

VGS =-4.5V

-

43

-

nC

Qgs

Gate-Source Charge

-

7.9

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

11.2

-

nC

td(on)

Turn-on Delay Time

VDD =-10V, ID =-15A,

RGEN=2.7Ω,VGS =-10V

-

14.5

-

ns

tr

Turn-on Rise Time

-

20.2

-

ns

td(off)

Turn-off Delay Time

-

93

-

ns

tf

Turn-off Fall Time

-

161

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-50

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-220

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=-20A

-

0.85

-1.2

V

trr

Reverse Recovery Time

TJ=25℃,ID=-15A,

VGS=0V di/dt=-100A/μs

-

28

-

ns

Qrr

Reverse Recovery Charge

-

25.7

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The test condition is VDD=-16V, VGS=-10V, L=0.1mH, IAS=-26.6A RG=25Ω

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.