AP60P02D

-20V P-Channel Enhancement Mode MOSFET

AP60P02D REV1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

-20

-22

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±10V

-

-

±100 nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = -20V, VGS = 0V

-

-

-1

μA

Zero Gate Voltage Drain Current TJ=100°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-0.5

0.7

-1.2

V

RDS(on)

Drain-Source on-Resistance4

VGS = -4.5V, ID = -20A

-

6.8

8.5

mΩ

VGS = -2.5V, ID = -15A

-

7.5

9.0

gfs

Forward Transconductance4

VDS= -5V, ID= -15A

-

78

-

S

Ciss

Input Capacitance

VDS = -10V, VGS =0V,

f =1MHz

-

3560

-

pF

Coss

Output Capacitance

-

500

-

Crss

Reverse Transfer Capacitance

-

430

-

Rg

Gate Resistance

f = 1MHz

-

11

-

Ω

Qg

Total Gate Charge

VGS = -4.5V, VDS = -10V,

ID= -15A

-

43

-

nC

Qgs

Gate-Source Charge

-

7.9

-

Qgd

Gate-Drain Charge

-

11.2

-

td(on)

Turn-on Delay Time

VGS = -4.5V, VDD = -10V, RG =

3Ω, ID= -15A,

-

14.5

-

ns

tr

Rise Time

-

20.2

-

td(off)

Turn-off Delay Time

-

93

-

tf

Fall Time

-

161

-

trr

Body Diode Reverse Recovery Time

IF = -15A, dIF/dt = 100A/µs

-

28

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

25.7

-

nC

VSD

Diode Forward Voltage4

IS = -1A, VGS = 0V

-

-

-1.2

V

IS

Continuous Source Current

TC=25°C

-

-

-65

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The EAS data shows Max. rating . The test condition is VDD=-16V,VGS=-10V,L=0.1mH,IAS=12A

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.