AP60P02NF

-20V P-Channel Enhancement Mode MOSFET

AP60P02NF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source breakdown voltage

VGS = 0V, ID = 250μA

-20

-24

—

V

RDS(on)

Static Drain-to-Source on-resistance

VGS =-4.5V, ID =-10A

—

9.0

12

mΩ

VGS =-2.5V, ID =-8.9A

—

12

16

VGS =-1.8V, ID =-4.5A

—

17

21

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250μA

-0.4

0.6

-1

V

IDSS

Drain-to-Source leakage current

VDS = -12V,VGS = 0V

—

—

-1

μA

IGSS

Gate-to-Source forward leakage

VGS = 8V

—

—

100

nA

VGS = -8V

—

—

-100

gFS

Forward Transconductance

VDS = -5V, ID =-10A

-3

—

—

S

Qg

Total gate charge

ID = -10A,

VDD=-6V,

VGS = -4.5V

—

21

—

nC

Qgs

Gate-to-Source charge

—

2.5

—

Qgd

Gate-to-Drain("Miller") charge

—

6

—

td(on)

Turn-on delay time

VGS=-4.5V,

VDD=-6V,

ID = -10A,

RGEN=6Ω

—

30

—

ns

tr

Rise time

—

48

—

td(off)

Turn-Off delay time

—

97

—

tf

Fall time

—

65

—

Ciss

Input capacitance

VGS = 0V VDS = -6V ƒ =

1MHz

—

2138

—

pF

Coss

Output capacitance

—

273

—

Crss

Reverse transfer capacitance

—

236

—

IS

Continuous Source Current (Body Diode)

MOSFET symbol showing

the integral reverse p-n

junction diode.

—

—

-30

A

ISM

Pulsed Source Current (Body Diode)

—

—

-90

A

VSD

Diode Forward Voltage

IS=-2A, VGS=0V

—

-0.77

-1.2

V

trr

Reverse Recovery Time

TJ = 25°C, IF =-10A, di/dt =

100A/μs

—

16

—

ns

Qrr

Reverse Recovery Charge

—

5.9

—

uC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.