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AP70H02GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP70H02GD
Description  20V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP70H02GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP70H02GD
20V N+N-Channel Enhancement Mode MOSFET
AP70H02GD REV1.0
永源微電子科技有限公司
Description
The AP70H02GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=20V ID=70A
RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.8mΩ）
RDS(ON) < 6.2mΩ @ VGS=4.5V （Type：5.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP60N02DF
PDFN3*3-8L
AP60N02DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 4.5V
60
A
ID@TA=70℃
Continuous Drain Current, VGS @ 4.5V
39
A
IDM
Pulsed Drain Current note1
200
A
EAS
Single Pulsed Avalanche Energy note2
47.6
mJ
PD@TA=25℃
Power Dissipation
37
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance, Junction to Case
4
℃
/W


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