AP80G03GD

30V N+P-Channel Enhancement Mode MOSFET

AP80G03GD RVE1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-30A

---

6.2

8.0

mΩ

VGS=-4.5V , ID=-15A

---

11

13

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

1.6

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25

℃

---

---

-1

uA

VDS=-24V , VGS=0V , TJ=55

℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-30A

---

25

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-

15A

---

30

---

nC

Qgs

Gate-Source Charge

---

10

---

Qgd

Gate-Drain Charge

---

10.4

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V ,

RG=3.3Ω

ID=-15A

---

9.4

---

ns

Tr

Rise Time

---

10.2

---

Td(off)

Turn-Off Delay Time

---

117

---

Tf

Fall Time

---

24

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

3448

---

pF

Coss

Output Capacitance

---

508

---

Crss

Reverse Transfer Capacitance

---

421

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-50

A

ISM

Pulsed Source Current2

---

---

-130

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1

V

trr

Reverse Recovery Time

IF=-15A , dI/dt=100A/µs ,

TJ=25

℃

---

20

---

nS

Qrr

Reverse Recovery Charge

---

9.5

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD= -24V, VG= -10V, RG=7Ω, L=0.1mH, IAS= -72A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.