AP80H03GD

30V N+N-Channel Enhancement Mode MOSFET

AP80H03GD RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

30

32

-

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃, ID=1mA

---

0.028

---

V/

℃

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

1.0

1.6

2.5

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS =10V, ID =30A

-

4.5

5.5

mΩ

RDS(on)

Static Drain-Source on-Resistance note3

VGS =4.5V, ID =20A

-

6.7

9.5

mΩ

IDSS

Zero Gate Voltage Drain Current

VDS =30V, VGS = 0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±20V

-

-

±100

nA

Ciss

Input Capacitance

VDS =15V, VGS =0V,

f = 1.0MHz

-

2100

-

pF

Coss

Output Capacitance

-

326

-

pF

Crss

Reverse Transfer Capacitance

-

282

-

pF

Qg

Total Gate Charge

VDS =15V, ID =30A,

VGS =10V

-

45

-

nC

Qgs

Gate-Source Charge

-

3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

15

-

nC

td(on)

Turn-on Delay Time

VDS=15V,

ID=30A, RGEN=3Ω,

VGS =10V

-

21

-

ns

tr

Turn-on Rise Time

-

32

-

ns

td(off)

Turn-off Delay Time

-

59

-

ns

tf

Turn-off Fall Time

-

34

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

90

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

360

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A,dI/dt=100A/μs

-

15

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

4

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond

≦ 300us , duty cycle ition is VDD=25V,VGS =10V,L=0.1mH,IAS=53.8A

4、The power dissipation is limited by 175

℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.