AP80N03CD

30V N-Channel Enhancement Mode MOSFET

AP80N03CD REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

30

35

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

-

-

1

μA

IDSS TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=250µA

1.2

1.6

2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS=10V, ID=30A

-

4.0

5.5

mΩ

VGS=4.5V, ID=15A

-

6.8

8.5

gfs

Forward Transconductance4

VDS=10V , ID=30A

-

80

-

S

Ciss

Input Capacitance

VDS=15V, VGS=0V,

f=1MHz

-

2288

-

pF

Coss

Output Capacitance

-

277

-

Crss

Reverse Transfer Capacitance

-

209

-

Rg

Gate Resistance

f =1MHz

-

2

-

Ω

Qg

Total Gate Charge

VGS=4.5V, VDS=15V,

ID=30A

-

20

-

nC

Qgs

Gate-Source Charge

-

5

-

Qgd

Gate-Drain Charge

-

7.2

-

td(on)

Turn-On Delay Time

VGS=10V, VDD=15V, RG=3Ω,

ID=30A

-

9

-

ns

tr

Rise Time

-

16

-

td(off)

Turn-Off Delay Time

-

43

-

tf

Fall Time

-

12

-

trr

Body Diode Reverse Recovery

Time

IF=30A, dI/dt=100A/µs

-

17

-

ns

Qrr

Body Diode Reverse Recovery

Charge

-

9

-

nC

VSD

Diode Forward Voltage4

IS=1A, VGS=0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

100

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=24V,VGS=10V,L=0.1mH,IAS=36A

4

、The power dissipation is limited by 175℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.