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AP80N03NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80N03NF
Description  30V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80N03NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80N03NF
30V N-Channel Enhancement Mode MOSFET
AP80N03NF REV1.1
永源微電子科技有限公司
Description
The AP80N03NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =80A
RDS(ON) < 3.8mΩ VGS=10V （Type：2.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80N03NF
PDFN5*6-8L
AP80N03NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
65
A
IDM
Pulsed Drain Current2
360
A
EAS
Single Pulse Avalanche Energy3
144.7
mJ
IAS
Avalanche Current
53.8
A
PD@TC=25℃
Total Power Dissipation4
43.4
W
PD@TA=25℃
Total Power Dissipation4
1.67
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃
/W


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