AP80N07FIPIT

68V N-Channel Enhancement Mode MOSFET

AP80N07F/P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

68

72

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.023

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=10A

---

7.5

9.0

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

2.0

3.0

4.0

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

-4.2

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=68V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=68V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

Qg

Total Gate Charge (4.5V)

VDS =30V, ID =30A,

VGS =10V

---

35

---

nC

Qgs

Gate-Source Charge

---

11

---

Qgd

Gate-Drain Charge

---

9

---

Td(on)

Turn-On Delay Time

VDS =30V,ID =30A,

RGEN =3Ω, V GS =10V

---

15

---

ns

Tr

Rise Time

---

90

---

Td(off)

Turn-Off Delay Time

---

45

---

Tf

Fall Time

---

30

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

4000

---

pF

Coss

Output Capacitance

---

267

---

Crss

Reverse Transfer Capacitance

---

250

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

80

A

ISM

Pulsed Source Current2,5

---

---

320

A

VSD

Diode Forward Voltage2

V GS =0V, I S =80A

---

---

1.2

V

trr

Reverse Recovery Time

T J =25℃

I F =20A,dI/dt=100A/μs

---

78

---

nS

Qrr

Reverse Recovery Charge

---

51

---

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =35V, VG =10V, R G =25Ω, L=0.5mH, IAS =21A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.