AP80N07P datasheet(1/7 Pages) APME

Part #	AP80N07P

Description	68V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP80N07FIPIT

68V N-Channel Enhancement Mode MOSFET

AP80N07F/P/T REV1.0

永源微電子科技有限公司

Description

The AP80N07F/P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with Hight EAS. This device is suitable

for use as a Battery protectionor in other Switching

application.

General Features

VDS = 68V ID =80A

RDS(ON) < 9.0mΩ @ VGS=10V (Type：7.2mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N07F

TO-220F-3L

AP80N07F XXX YYYY

1000

AP80N07P

TO-220-3L

AP80N07P XXX YYYY

1000

AP80N07T

TO-263-3L

AP80N07T XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

68

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

52

A

IDM

Pulsed Drain Current2

320

A

EAS

Single Pulse Avalanche Energy3

110

mJ

IAS

Avalanche Current

22

A

PD@TC=25

℃

Total Power Dissipation4

103

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

63

℃/W

RθJC

Thermal Resistance Junction-Case1

1.46

℃/W

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AP80N07P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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