AP80P01NF

-12V P-Channel Enhancement Mode MOSFET

AP80P01NF RVE1.0

臺灣永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-15

-17

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.008

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V , ID=-20A

---

3.5

4.5

m

Ω

VGS=-2.5V , ID=-20A

---

4.8

6.0

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.4

-0.6

-1.0

V

△VGS

VGS(th) Temperature Coefficient

---

-3.44

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-20V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-16V ,VGS=0V ,TJ=125℃

---

---

-30

uA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±500

nA

gfs

Forward Transconductance

VDS=-10V , IS=-3A

---

30

---

S

Qg

Total Gate Charge2 , 3

VDS=-16V , VGS=-4.5V , ID=-

5A

---

149

225

nC

Qgs

Gate-Source Charge2 , 3

---

14.4

22

Qgd

Gate-Drain Charge2 , 3

---

42.8

65

Td(on)

Turn-On Delay Time2 , 3

VDD=-15V , VGS=-4.5V ,

RG=25

ID=-1A

---

21.2

42

nS

Tr

Rise Time2 , 3

---

20.6

40

Td(off)

Turn-Off Delay Time2 , 3

---

26

52

Tf

Fall Time2 , 3

---

400

600

Ciss

Input Capacitance

VDS=-15V , VGS=0V , F=1MHz

---

6800

Coss

Output Capacitance

---

769

pF

Crss

Reverse Transfer Capacitance

---

726

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2.6

---

Ω

IS

Contineous Source Current

Vg=Vd=0V, Force Current

--

--

-90

A

ISM

Pulsed Source

Current

--

--

-180

VSD

Diode Forward Voltage

Vgs=0V Is=1A Tj=25℃

--

--

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.