AP80P02DF

-20V P-Channel Enhancement Mode MOSFET

AP80P02DF REV1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

-20

-

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±12V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25

℃

VDS = -20V, VGS = 0V

-

-

-1

μA

IDSS

Zero Gate Voltage Drain Current TJ=100

℃

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-0.4

-0.7

-1.0

V

RDS(on)

Drain-Source On-Resistance4

VGS = -4.5V, ID = -10A

-

4.0

5.5

mΩ

RDS(on)

Drain-Source On-Resistance4

VGS = -2.5V, ID = -10A

-

5.0

6.8

gfs

Forward Transconductance4

VDS = -4.5V, ID = -10A

-

56

-

S

Ciss

Input Capacitance

VDS = -10V, VGS =0V,

f =1MHz

-

4770

-

pF

Coss

Output Capacitance

-

665

-

Crss

Reverse Transfer Capacitance

-

570

-

Rg

Gate Resistance

f =1MHz

-

9.6

-

Ω

Qg

Total Gate Charge

VGS = -4.5V,VDS = -10V,

ID= -10A

-

55

-

nC

Qgs

Gate-Source Charge

-

5.2

-

Qgd

Gate-Drain Charge

-

10

-

td(on)

Turn-On Delay Time

VGS = -4.5V, VDD = -10V,

RG = 3Ω, ID= -10A

-

22

-

ns

tr

Rise Time

-

38

-

td(off)

Turn-Off Delay Time

-

110

-

tf

Fall Time

-

62

-

VSD

Diode Forward Voltage4

IS = -10A, VGS = 0V

-

-

-1.2

V

IS

Continuous Source Current

TC=25°C

-

-

-70

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.4mH, I AS = -20A.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.