AP80P04PIT

-40V P-Channel Enhancement Mode MOSFET

AP80P04P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250µA

-40

-

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS=-40V, VGS=0V

-

-

-1

μA

IDSS TJ=100°C

-100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=-250µA

-1.0

-1.6

-2.5

V

RDS(on)

Drain-Source on-Resistance4

VGS=-10V, ID=-20A

-

6.5

8.5

mΩ

VGS=-4.5V, ID=-15A

-

8.2

11

gfs

Forward Transconductance4

VDS=-10V, ID=-20A

-

104

-

S

Ciss

Input Capacitance

VDS=-20V, VGS=0V,

f=1MHz

-

5282

-

pF

Coss

Output Capacitance

-

431

-

Crss

Reverse Transfer Capacitance

-

383

-

Rg

Gate Resistance

f=1MHz

-

4.4

-

Ω

Qg

Total Gate Charge

VGS=-10V, VDS=-20V,

ID=-20A

-

110

-

nC

Qgs

Gate-Source Charge

-

12.5

-

Qgd

Gate-Drain Charge

-

23

-

td(on)

Turn-on Delay Time

VGS=-10V, VDD -20V,

RG=3Ω, ID=-20A

-

16.8

-

ns

tr

Rise Time

-

10

-

td(off)

Turn-off Delay Time

-

65

-

tf

Fall Time

-

17

-

trr

Body Diode Reverse Recovery Time

IF=-20A, dI/dt=100A/µs

-

42

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

29

-

nC

VSD

Diode Forward Voltage4

IS=-20A, VGS=0V

-

-

-

-1.2

V

IS

Continuous Source Current

-

-

-80

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-32V,VGS=-10V,L=0.1mH,IAS=-45A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.