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AP80P06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80P06NF
Description  -60V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80P06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80P06NF
-60V P-Channel Enhancement Mode MOSFET
AP80P06NF RVE 1.0
永源微電子科技有限公司
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80P06NF
PDFN5*6-8L
AP80P06NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, -VGS @ -10V1
-80
A
ID@TC=100℃
Continuous Drain Current, -VGS @ -10V1
-38
A
IDM
Pulsed Drain Current2
-240
A
EAS
Single Pulse Avalanche Energy3
400
mJ
IAS
Avalanche Current
41
A
PD@TC=25℃
Total Power Dissipation4
104
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
1.2
℃
/W
RθJC
Thermal Resistance Junction-Case1
70
℃
/W
Description
The AP80P06NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 6V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -60V ID =-80A
RDS(ON) < 11mΩ @ VGS=-10V (Type：9mΩ)
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging


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