AP80P10NF

-100V P-Channel Enhancement Mode MOSFET

AP80P10NF RVE1.0

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-100

110

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=-100V, VGS=0V,

-

-

-1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS=-10V, ID=-20A

-

18

25

mΩ

VGS=-4.5V, ID=-10A

-

21

30

Ciss

Input Capacitance

VDS=-50V, VGS=0V,

f=1.0MHz

-

4230

-

pF

Coss

Output Capacitance

-

388

-

pF

Crss

Reverse Transfer Capacitance

-

26

-

pF

Qg

Total Gate Charge

VDS=-50V, ID=-5A,

VGS=-10V

-

80

-

nC

Qgs

Gate-Source Charge

-

15.6

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

17.2

-

nC

td(on)

Turn-on Delay Time

VDD=-50V, ID=-5A,

RG=6Ω, VGS=-10V

-

26

-

ns

tr

Turn-on Rise Time

-

78

-

ns

td(off)

Turn-off Delay Time

-

200

-

ns

tf

Turn-off Fall Time

-

210

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-80

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-280

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=-30A

-

-

-1.2

V

trr

Body Diode Reverse Recovery Time

TJ=25

℃,

IF=-5A,dI/dt=100A/μs

-

208

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

560

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is V DD =-72V,VGS =-10V,L=0.1mH,IAS =-50A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.