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AP100N08P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N08P
Description  85V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N08P Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N08PIT
85V N-Channel Enhancement Mode MOSFET
AP100N08P/T RVE1.0
永源微電子科技有限公司
Description
The AP100N08P/T uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 85V ID =100A
RDS(ON) < 5.8mΩ VGS=10V （Type：4.8mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N08P
TO220-3L
AP100N08P XXX YYYY
1000
AP100N08T
TO263-3L
AP100N08T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
85
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
100
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
86
A
IDM
Pulsed Drain Current
544
A
EAS
Single Pulse Avalanche Energy
434
mJ
PD@TC=25℃
Total Power Dissipation4
166
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case
0.65
℃
/W


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