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AP90P03NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP90P03NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP90P03NF -30V P-Channel Enhancement Mode MOSFET AP90P03D RVE1.0 永源微電子科技有限公司 Description The AP90P03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-90A RDS(ON) <6.5m Ω @ VGS=-10V (Type：4.9mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP90P03NF PDFN5*6-8L AP90P03NF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TC = 25℃ -90 A ID Continuous Drain Current TC = 100℃ -59 A IDM Pulsed Drain Current note1 -360 A EAS Single Pulsed Avalanche Energy note2 210 mJ PD Power Dissipation TC = 25℃ 109 W RθJC Thermal Resistance, Junction to Case 1.4 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ |
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