AP100N25MP

250V N-Channel Enhancement Mode MOSFET

AP100N25MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID=250µA

250

275

--

V

IDSS

Drain to Source Leakage Current

VDS=250V, VGS=0V,Ta=25

℃

--

--

1.0

µA

VDS=250V, VGS=0V,Ta=125

℃

--

--

100

IGSS(F)

Gate to Source Forward Leakage

VGS=+20V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage

VGS=-20V

--

--

-100

nA

RDS(ON)

Drain-to-Source On-Resistance

VGS=10V, ID=35A

--

28

33

mΩ

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID=250µA

3.6

4.5

5.0

V

gfs

Forward Trans conductance

VDS=10V, ID=35A

100

--

--

S

Rg

Gate Resistance

VGS=0V VDS open f=1.0MHz

1.5

Ω

Ciss

Input Capacitance

VGS=0V VDS=25V f=1.0MHz

--

7000

pF

Coss

Output Capacitance

--

480

pF

Crss

Reverse Transfer Capacitance

--

210

pF

td(ON)

Turn-on Delay Time

ID=35A, VDS=50V

VGS=10V, Rg=2.5Ω

--

45

--

ns

tr

Rise Time

--

70

--

ns

td(OFF)

Turn-Off Delay Time

--

110

--

ns

tf

Fall Time

--

90

--

ns

Qg

Total Gate Charge

ID=35A, VDD=100V

VGS=10V

--

200

--

nC

Qgs

Gate to Source Charge

--

28

--

nC

Qgd

Gate to Drain (“Miller”) Charge

--

60

--

nC

ISD

Continuous Source Current (Body Diode)

--

--

58

A

ISM

Maximum Pulsed Current (Body Diode)

--

--

230

A

VSD

Diode Forward Voltage

IS=35A, VGS=0V

--

--

1.2

V

trr

Reverse Recovery Time

IS=30A,Tj=25

℃，VDD=50V

dIF/dt=100A/μs, VGS=0V

--

120

--

ns

Qrr

Reverse Recovery Charge

--

0.55

--

uC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 35A, RG = 25Ω, VDD=50V，VGS=10V, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.