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AP100P10D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100P10D
Description  -95V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100P10D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100P10D
-95V P-Channel Enhancement Mode MOSFET
AP100P10D REV1.0
永源微電子科技有限公司
Description
The AP100P10D uses advanced APM-SGT V technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -95V ID =-100A
RDS(ON) <16mΩ @ VGS=10V (Type：12mΩ)
Application
Brushless motor
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100P10D
TO-252-3L
AP100P10D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-95
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1
-100
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1
-66
A
IDM
Pulsed Drain Current2
-300
A
EAS
Single Pulse Avalanche Energy3
174
mJ
IAS
Avalanche Current
-50
A
PD@TC=25℃
Total Power Dissipation4
280
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.1
℃
/W


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