AP110N10D datasheet(1/7 Pages) APME

Part #	AP110N10D

Description	100V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP110N10D

100V N-Channel Enhancement Mode MOSFET

AP110N10D REV1.0

永源微電子科技有限公司

Description

The AP110N10D uses advanced APM-SGTⅠⅠ technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =110A

RDS(ON) < 5.8mΩ @ VGS=10V (Type：4.8mΩ)

Application

DC/DC Converter

LED Backlighting

Power Management Switches

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP110N10D

TO-252-3L

AP110N10D XXX YYYY

2500

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V

110

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

70

A

IDM

Pulsed Drain Current

435

A

EAS

Single Pulse Avalanche Energy

294

mJ

IAS

Avalanche Current

32

A

PD@TC=25

℃

Total Power Dissipation4

125

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient

62.5

℃/W

RθJC

Thermal Resistance Junction-Case

1.2

℃

/W

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AP110N10D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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