AP150P02D datasheet(1/7 Pages) APME

Part #	AP150P02D

Description	-20V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP150P02D

-20V P-Channel Enhancement Mode MOSFET

AP150P02D REV1.0

永源微電子科技有限公司

Description

The AP150P02D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-150A

RDS(ON) < 2.5mΩ @ VGS=-4.5V (Type：2.1mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150P02D

TO-252-3L

AP150P02D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-150

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-76

A

IDM

Pulsed Drain Current2

450

A

EAS

Single Pulse Avalanche Energy3

450

mJ

IAS

Avalanche Current

-50

A

PD@TC=25℃

Total Power Dissipation4

104

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

15

℃/W

RθJC

Thermal Resistance Junction-Case1

0.9

℃/W

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AP150P02D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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