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AP150P03D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP150P03D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP150P03D -30V P-Channel Enhancement Mode MOSFET AP150P03D REV1.0 永源微電子科技有限公司 Description The AP150P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-150A RDS(ON) <3.2mΩ @ VGS=-10V （Type：2.3mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP150P03D TO-252-3L AP150P03D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -150 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -125 A IDM Pulsed Drain Current2 -540 A EAS Single Pulse Avalanche Energy3 650 mJ IAS Avalanche Current -70 A PD@TC=25℃ Total Power Dissipation4 300 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃ /W RθJC Thermal Resistance Junction-Case1 0.47 ℃ /W |
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