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M29W008AT Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W008AT Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 30 page ![]() 1/30 March 2000 M29W008AT M29W008AB 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 80ns s PROGRAMMING TIME: 10µs typical s PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output s SECURITY PROTECTION MEMORY AREA s INSTRUCTIONS ADDRESS CODING: 3 digits s MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks s BLOCK, MULTI-BLOCK and CHIP ERASE s MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W008AT: D2h – Bottom Device Code, M29W008AB: DCh Figure 1. Logic Diagram AI02716 20 A0-A19 W DQ0-DQ7 VCC M29W008AT M29W008AB E VSS 8 G RP RB TSOP40 (N) 10 x 20mm |
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