AP200N03P datasheet(1/7 Pages) APME

Part #	AP200N03P

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP200N03PIT

30V N-Channel Enhancement Mode MOSFET

AP200N03P/T RVE1.0

永源微電子科技有限公司

Description

The AP200N03P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=30V ID =200A

RDS(ON) < 2.2mΩ @ VGS=10V

（Type：1.6mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP200N03P

TO-220-3L

AP2000N03P XXXX YYYY

1000

AP200N03T

TO-263-3L

AP200N03T XXXX YYYY

800

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1,6

200

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1,6

155

A

IDM

Pulsed Drain Current2

760

A

EAS

Single Pulse Avalanche Energy3

441

mJ

IAS

Avalanche Current

70.2

A

PD@TC=25

℃

Total Power Dissipation4

201

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

0.8

℃/W

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AP200N03P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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