AP200N11PIT

110V N-Channel Enhancement Mode MOSFET

AP200N10P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID=250mA, VGS=0V

110

118

V

IDSS

Zero Gate Voltage Drain Current

VDS=80V, VGS=0V

1.0

mA

VDS=80V, VGS=0V TJ=55°C

5.0

IGSS

Gate-Body Leakage Current

VDS=0V, VGS=±20V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250mA

2.5

3.2

4.3

V

RDS(ON)

Static Drain-Source ON-Resistance

VGS=10V, ID=20A

3.1

3.7

mΩ

Gfs

Forward Transconductance

VDS=5V, ID=20A

36

S

Ciss

Input Capacitance

VGS=0V, VDS=50V, f=1MHz

5972

pF

Coss

Output Capacitance

1181

pF

Crss

Reverse Transfer Capacitance

43

pF

Rg

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

2.1

Ω

Qg

Total Gate Charge (@ VGS = 10V)

VGS= 0 to 10V

VDS=50V, ID=20A

95

nC

Qg

Total Gate Charge (@ VGS = 6V)

62

nC

Qgs

Gate Source Charge

33

nC

Qgd

Gate Drain Charge

25

nC

tD(on)

Turn-On DelayTime

VGS=10V, VDS=50V

RL=2.5W, RGEN=3W

22

ns

tr

Turn-On Rise Time

31

ns

tD(off)

Turn-Off DelayTime

48

ns

tf

Turn-Off Fall Time

30

ns

trr

Body Diode Reverse Recovery Time

IF=15A, dIF/dt=100A/ms

74

ns

Qrr

Body Diode Reverse Recovery Charge

IF=15A, dIF/dt=100A/ms

169

nC

VSD

Diode Forward Voltage

IS=1A, VGS=0V

0.70

1.2

V

IS

Diode Continuous Current

TC = 25°C

240

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V, L=0.3mH IAS=53A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation