Electrical Characteristics (at TA=25°C unless otherwise noted)

General Purpose Transistors

Rating and Characteristic Curves (MMBT4401-HF)

Parameter

Conditions

Min.

Max.

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-emitter cut-off current

Collector-base cut-off current

Emitter-base cut-off current

DC current gain

60

40

6

100

100

100

V

V

V

nA

nA

nA

Typ.

IC = 10mA, IE = 0

IC = 1mA, IB = 0

IE = 100μA, IC = 0

VCE = 35V, IB = 0

VCB = 60V, IE = 0

VEB = 3V, IC = 0

VCE = 1V, IC = 150mA

100

300

Symbol

VCBO

VCEO

ICEO

ICBO

IEBO

hFE

VEBO

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.40

V

IC = 150mA, IB = 15mA

0.95

V

IC = 150mA, IB = 15mA

VCE(sat)

VBE(sat)

Transition frequency

250

ΜΗz

VCE = 10V, IC = 20mA,

f = 100MHz

Delay time

15

ns

20

ns

VCC = 30V, VBE(off) = 0.2V,

IC = 150mA, IB1 = 15mA

Rise time

Storage time

225

ns

30

ns

VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA

Fall time

fT

td

tr

tS

tf

QW-JTR91

Page 2

REV:B

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

0

50

100

1

3

4

Collector Current, Ic (mA)

Fig.2 - DC Current Gain

10

1000

100

0.1

1

10

100

2

600

IB=0.05mA

0.1mA

0.15mA

0.2mA

0.25mA

0.3mA

0.35mA

0.4mA

0.45mA

0.5mA

Ta=25°C

VCE= 1V

Ta=125°C

Ta=100°C

Ta=25°C

Ta=-25°C