AP300N15TIP2

150V N-Channel Enhancement Mode MOSFET

AP300N15T/P2 REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V ID = 250μA

150

165

V

IDSS

Zero Gate Voltage Drain Current

VDS = 150V, VGS = 0V

1.0

nA

IDSS TJ = 55°C

Zero Gate Voltage Drain Current

VDS = 150V,TJ = 55°C

5.0

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

2.5

3.2

4.5

V

RDS(ON)

Static Drain-Source

VGS = 10V, ID =40A

3.3

4.0

mΩ

gFS

Forward Transconductance

VDS = 5V, ID = 20A

65

S

Rg

Gate Resistance

VGS = 0V, VDS= 0V, f = 1MHz

2.4

Ω

Ciss

Input Capacitance

VGS=0V, VDS=25V,

f=1MHz

6540

pF

Coss

Output Capacitance

772

pF

Crss

Reverse Transfer Capacitance

6.7

pF

Qg

Total Gate Charge

VGS = 0 to 10V

VDS = 75V, ID = 20A

88

nC

Qgs

Gate Source Charge

32

nC

Qgd

Gate Drain Charge

16

nC

tD(on)

Turn-On DelayTime

VGS = 10V, VDS = 75V

RL = 3.75Ω, RGEN = 6Ω

48

ns

tr

Turn-On Rise Time

90

ns

tD(off)

Turn-Off DelayTime

94

ns

tf

Turn-Off Fall Time

60

ns

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/us

122

ns

Qrr

Body Diode Reverse Recovery Charge

IF=20A, dI/dt=500A/us

279

nC

VSD

Diode Forward Voltage

IS = 1A, VGS = 0V

0.71

1.0

V

IS

Diode Continuous Current

TC = 25°C

600

A

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.1mH, IAS=88A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.