AP2307AI

-20V P-Channel Enhancement Mode MOSFET

AP2307AI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-20

-22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -20V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-0.5

-0.7

-1.2

V

RDS(on)

Static Drain-Source on-Resistance

note2

VGS= -4.5V, ID= -6A

-

20

25

mΩ

VGS= -2.5V, ID= -5A

-

28

35

Ciss

Input Capacitance

VDS= -10V, VGS=0V,

f=1.0MHz

-

2000

-

pF

Coss

Output Capacitance

-

242

-

pF

Crss

Reverse Transfer Capacitance

-

231

-

pF

Qg

Total Gate Charge

VDS= -10V, ID= -3A,

VGS= -4.5V

-

15.3

-

nC

Qgs

Gate-Source Charge

-

2.2

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

4.4

-

nC

td(on)

Turn-on Delay Time

VDD = -10V, ID= -7A,

VGS= -4.5V,

RGEN=2.5Ω

-

10

-

ns

tr

Turn-on Rise Time

-

31

-

ns

td(off)

Turn-off Delay Time

-

28

-

ns

tf

Turn-off Fall Time

-

8

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-7

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-28

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -7A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.