M29F160 datasheet(10/22 Pages) STMICROELECTRONICS

10 / 22 page

M29F160BT, M29F160BB

10/22

memory is waiting for an additional block (before

the Program/Erase Controller starts) then the

Erase is suspended immediately and will start im-

mediately when the Erase Resume Command is

issued. It will not be possible to select any further

blocks for erasure after the Erase Resume.

During Erase Suspend it is possible to Read and

Program cells in blocks that are not being erased;

both Read and Program operations behave as

normal on these blocks. Reading from blocks that

are being erased will output the Status Register. It

is also possible to enter the Auto Select mode: the

memory will behave as in the Auto Select mode on

all blocks until a Read/Reset command returns the

memory to Erase Suspend mode.

Erase Resume Command. The Erase Resume

command must be used to restart the Program/

Erase Controller from Erase Suspend. An erase

can be suspended and resumed more than once.

Table 9. Program, Erase Times and Program, Erase Endurance Cycles

(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)

Note: 1. TA = 25°C, VCC = 5V.

Parameter

Min

Typ (1)

Typical after

100k W/E Cycles (1)

Max

Unit

Chip Erase (All bits in the memory set to ‘0’)

sec

Chip Erase

sec

Block Erase (64 Kbytes)

0.6

sec

Program (Byte or Word)

150

µs

Chip Program (Byte by Byte)

sec

Chip Program (Word by Word)

sec

Program/Erase Cycles (per Block)

100,000

cycles

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