AP4412A datasheet(1/7 Pages) APME

Part #	AP4412A

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP4412A

30V N-Channel Enhancement Mode MOSFET

AP4412A REV1.0

永源微電子科技有限公司

Description

The AP4412A uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=30V ID =25A

RDS(ON) < 6.5mΩ @ VGS=10V

（Type：5.2mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4412A

SOP-8L

AP4412A XXXX YYYY

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

25

A

ID@TC=75℃

Continuous Drain Current, VGS @ 10V1

18

A

IDM

Pulsed Drain Current2

240

A

EAS

Single Pulse Avalanche Energy3

56

mJ

IAS

Avalanche Current

15

A

PD@TC=25℃

Total Power Dissipation4

46

W

PD@TA=25℃

Total Power Dissipation4

2.72

W

TSTG，TJ

Storage Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

2.72

℃/W

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AP4412A Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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