AP9435B

-30V P-Channel Enhancement Mode MOSFET

AP9435B REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-36

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS =-10V, ID =-5A

-

37

45

mΩ

VGS =-4.5V, ID =-4A

-

52

70

Ciss

Input Capacitance

VDS = -15V, VGS = 0V, f =

1.0MHz

-

596

-

pF

Coss

Output Capacitance

-

95

-

pF

Crss

Reverse Transfer Capacitance

-

68

-

pF

Qg

Total Gate Charge

VDS= -15V, ID = -5.1A,

VGS = -10V

-

6.8

-

nC

Qgs

Gate-Source Charge

-

1

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

1.4

-

nC

td(on)

Turn-on Delay Time

VDD = -15V, ID = -1A,

VGS=-10V, RGEN=2.5Ω

-

14

-

ns

tr

Turn-on Rise Time

-

61

-

ns

td(off)

Turn-off Delay Time

-

19

-

ns

tf

Turn-off Fall Time

-

10

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-5.1

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-20.4

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -5.1A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-23A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.