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AP9435D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP9435D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP9435D -30V P-Channel Enhancement Mode MOSFET AP9435D REV1.0 永源微電子科技有限公司 Description The AP9435D uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-5.2A RDS(ON) < 85mΩ @ VGS=10V (Type:68mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP9435D SOP-8L AP9435D XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ -10V1 -5.2 A ID@TC=100 ℃ Continuous Drain Current, VGS @ -10V1 -2.4 A IDM Pulsed Drain Current note1 -14 A PD Power Dissipation TA = 25 ℃ 1 W RθJA Thermal Resistance, Junction to Ambient 85 ℃/W RθJC Thermal Resistance from Junction to Ambient2 135 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ |
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