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IXTR170P10P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTR170P10P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1409 eq IXTR170P10P P-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= -100A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15.4mΩ(Max)@VGS= -10V APPLICATIONS · DC Choppers · High-Side Switches · Current Regulators Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -100 A IDM Drain Current-Single Pulse -510 A PD Total Dissipation 300 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃ /W |
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