M48T201V datasheet(26/33 Pages) STMICROELECTRONICS

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M48T201Y, M48T201V

26/33

Table 13. DC Characteristics

Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).

2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor.

3. Outputs deselected.

4. For IRQ/FT & RST pins (Open Drain).

5. Conditioned outputs (ECON - GCON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents

will reduce battery life.

6. External SRAM must match TIMEKEEPER SUPERVISOR chip VCC specification.

Sym

Parameter

Test Condition(1)

M48T201Y

M48T201V

Unit

–70

–85

Min

Typ

Max

Min

Typ

Max

ILI

(2)

Input Leakage Current

≤ VIN ≤ VCC

±1

µA

ILO

(3)

Output Leakage Current

≤ VOUT ≤ VCC

±1

µA

ICC

Supply Current

Outputs open

ICC1

Supply Current (Standby)

TTL

E = VIH

ICC2

Supply Current (Standby)

CMOS

E = VCC –0.2

IBAT

Battery Current OSC ON

VCC = 0V

575

800

575

800

Battery Current OSC

OFF

100

VIL

Input Low Voltage

–0.3

0.8

–0.3

0.8

VIH

Input High Voltage

2.2

VCC +

0.3

2.0

VCC +

0.3

VOL

Output Low Voltage

IOL = 2.1mA

0.4

Output Low Voltage

(open drain)(4)

IOL = 10mA

0.4

VOH

Output High Voltage

IOH = –1.0mA

2.4

VOHB

(5)

VOH Battery Back-up

IOUT2 = –1.0µA

2.0

3.6

2.0

3.6

IOUT1

(6)

VOUT Current (Active)

VOUT1 > VCC –0.3

100

IOUT2

VOUT Current (Battery

Back-up)

VOUT2 > VBAT –0.3

100

µA

VPFD

Power-fail Deselect

Voltage

4.1

4.35

4.5

2.7

2.9

3.0

VSO

Battery Back-up

Switchover Voltage

3.0

VPFD –

100mV

VBAT

Battery Voltage

3.0

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