Electrical Characteristics (at TJ=25°C unless otherwise noted)

Typical Rating and Characteristic Curves (ABAT54W-HF Series)

Fig.3 - Capacitance Characteristics

0

20

0

20

Reverse Voltage, VR (V)

10

15

5

4

Fig.4 - Power Derating Curve

0

125

100

0

Ambient Temperature, TA (°C)

50

100

200

75

25

250

50

150

Fig.1 - Forward Characteristic

0

5

0.01

10

10

30

15

20

Reverse Voltage, VR (V)

0.1

1

Fig.2 - Reverse Characteristic

Forward Voltage, VF (mV)

0.1

100

25

SMD Schottky Barrier Diodes

Parameter

Symbol

Conditions

Max

Unit

Min

Reverse current

VR = 25V

IR

μA

Diode Capacitance

CJ

pF

2

5

VR = 1V, f = 1MHz

Reverse recovery time

trr

ns

IF = IR = 10mA, Irr = 1mA, RL = 100Ω

10

Forward voltage

IF = 10mA

VF

0.40

V

IF = 0.1mA

IF = 1mA

IF = 100mA

IF = 30mA

0.32

1.00

0.50

0.24

Typ

8

0

600

800

400

200

0.01

Comchip Technology CO., LTD.

REV:A

Page 2

AQW-JB048

Reverse breakdown voltage

VBR

V

IR = 100μA

30

12

16

Ta=25°C

f = 1MHz

1

10

200

100

Ta=25°C

Ta=100°C

Pulsed

300

Ta=100°C

Ta=25°C

Pulsed