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DMN3006SCA6-7 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN3006SCA6-7
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3006SCA6-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN3006SCA6
Document number: DS41380 Rev. 3 - 2
2 of 8
www.diodes.com
July 2020
© Diodes Incorporated
DMN3006SCA6
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Source-Source Voltage
VSSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Source Current (Note 5) VGS = 8V
Steady
State
TA = +25°C
TA = +70°C
IS
13.0
10.5
A
Continuous Source Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
IS
11.5
9.0
A
Pulsed Source Current (Note 6)
ISM
80
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 7)
PD
0.8
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 7)
RθJA
162
°C/W
Power Dissipation (Note 5)
PD
1.8
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
RθJA
68
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Source-Source Breakdown Voltage
BVSSS
30
—
—
V
VGS = 0V, IS = 1mA
Zero Gate Voltage Drain Current TJ = +25°C
ISSS
—
—
1
µA
VSS = 24V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±20V, VSS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1.3
—
2.2
V
VSS = 10V, IS = 1mA
Static Source-Source On-Resistance
RSS(ON)
2.5
4.6
5.5
m
Ω
VGS = 10V, IS = 5A
2.7
4.8
7.2
VGS = 8V, IS = 5A
3.0
6.3
9.0
VGS = 4.5V, IS = 5A
Diode Forward Voltage
VSS
—
0.95
1.2
V
VGS = 0V, IS = 5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
2235
—
pF
VSS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
414
—
Reverse Transfer Capacitance
Crss
—
274
—
Total Gate Charge
Qg
—
17.7
—
nC
VSS = 15V, VGS = 4.5V,
IS = 5A
Gate-Source Charge
Qgs
—
4.9
—
Gate-Drain Charge
Qgd
—
6.1
—
Gate Charge at VTH
Qg(TH)
—
3.0
—
Turn-On Delay Time
tD(ON)
—
5.6
—
ns
VSS = 15V, VGS = 10V,
IS = 5A
Turn-On Rise Time
tR
—
8.7
—
Turn-Off Delay Time
tD(OFF)
—
41.6
—
Turn-Off Fall Time
tF
—
20.9
—
Notes:
5. Device mounted on FR-4 material with 1inch
2 (6.45cm2), 2oz. (0.071mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.



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