DMN3061SW

Document number: DS41989 Rev. 2 - 2

4 of 7

www.diodes.com

April 2020

© Diodes Incorporated

DMN3061SW

0

0.02

0.04

0.06

0.08

0.1

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

V

= 10V

GS

I = 3.1A

D

V

= 4.5V

GS

I

= 2A

D

V

= 3.3V

GS

I = 1.5A

D

0

0.5

1

1.5

2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

I = 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

10

100

1000

10000

0

10

20

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

C iss

Coss

C rss

f=1MHz

0

2

4

6

8

10

0

3

6

9

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate Charge

V

= 15V

DS

I

= 3A

D

0.01

0.1

1

10

100

0.1

1

10

100

-V

DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

R DS(on)

Limited

V

= 10V

GS

Single Pulse

DUT on 1*MRP Board

TJ(max) = 150°C

TC = 25°C

DC

P

= 10ms

W

P

= 100µs

W

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 1ms

W

ID = 250μA

ID = 1mA

Figure 8 Gate Threshold Variation vs. Junction Temperature

VDS, DRAIN-SOURCE VOLTAGE (V)