DMN3061SW

Document number: DS41989 Rev. 2 - 2

2 of 7

www.diodes.com

April 2020

© Diodes Incorporated

DMN3061SW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

2.7

2.2

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

22

A

Maximum Body Diode Forward Current (Note 5)

IS

0.67

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

0.49

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RϴJA

254

°C/W

Total Power Dissipation (Note 6)

PD

0.65

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RϴJA

191

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

30

—

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

@TC = +25°C

IDSS

—

—

1.0

µA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.5

—

1.8

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

41

60

m

Ω

VGS = 10V, ID = 3.1A

—

48

100

VGS = 4.5V, ID = 2A

—

56

200

VGS = 3.3V, ID = 1.5A

Diode Forward Voltage

VSD

—

0.7

1

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

278

—

pF

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

44

—

pF

Reverse Transfer Capacitance

Crss

—

29

—

pF

Gate Resistance

Rg

—

4.2

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

3.5

—

nC

VDS = 15V, VGS = 4.5V, ID = 3A

Gate-Source Charge

Qgs

—

0.1

—

nC

Gate-Drain Charge

Qgd

—

1.3

—

nC

Turn-On Delay Time

tD(ON)

—

5.7

—

ns

VGS = 10V, VDS = 15V,

RG = 3Ω, RL = 1.7Ω

Turn-On Rise Time

tR

—

97

—

ns

Turn-Off Delay Time

tD(OFF)

—

12.6

—

ns

Turn-Off Fall Time

tF

—

51

—

ns

Notes:

5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.