DMNH15H110SK3

Document number: DS40912 Rev. 3 - 2

2 of 7

www.diodes.com

January 2021

© Diodes Incorporated

DMNH15H110SK3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

150

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = 10V

TC = +25°C

TC = +100°C

ID

18

12

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

72

A

Maximum Continuous Body Diode Forward Current (Note 7)

IS

18

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

72

A

Avalanche Current, L = 3mH

IAS

9

A

Avalanche Energy, L = 3mH

EAS

121.5

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

2.0

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

74

°C/W

Total Power Dissipation (Note 6)

PD

3.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

42

°C/W

Total Power Dissipation (Note 7)

PD

88

W

Thermal Resistance, Junction to Case (Note 7)

RJC

1.7

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

150





V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS





1

μA

VDS = 120V, VGS = 0V

Gate-Source Leakage

IGSS





±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

2



4

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)



70

97

m

Ω

VGS = 10V, ID = 2A



78

110

VGS = 6V, ID = 2A

Diode Forward Voltage

VSD



0.7

1.2

V

VGS = 0V, IS = 2A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



987



pF

VDS = 75V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss



63



pF

Reverse Transfer Capacitance

Crss



34



pF

Gate Resistance

Rg



1.3



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

Qg



25.5



nC

VDS = 75V, ID = 4A

Total Gate Charge (VGS = 6V)

Qg



17.8



nC

Gate-Source Charge

Qgs



4



nC

Gate-Drain Charge

Qgd



10



nC

Turn-On Delay Time

tD(ON)



18.1



ns

VDD = 75V, VGS = 10V,

Rg = 24Ω, ID = 4A

Turn-On Rise Time

tR



46



ns

Turn-Off Delay Time

tD(OFF)



76.1



ns

Turn-Off Fall Time

tF



58.7



ns

Reverse Recovery Time

tRR



41.6



ns

IF = 4A, di/dt = 100A/μs

Reverse Recovery Charge

QRR



65.6



nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.