MOSFET

RoHS Device

P-Channel

Halogen Free

Comchip Technology CO., LTD.

Features

- Low on resistance.

- Fast switching characteristic.

REV:A

Page 1

QW-JTR232

CMS03P06TL-HF

- Low gate charge.

Circuit Diagram

- G : Gate

- S : Source

- D : Drain

G

D

S

Mechanical data

- Case: SOT-23-3L, molded plastic.

- Mounting position: Any.

- Terminal: Solderable per MIL-STD-750,

method 2026.

Maximum Ratings (at TA=25°C unless otherwise noted)

Drain-source voltage

Gate-source voltage

Unit

Symbol

Parameter

VDS

VGS

Conditions

Value

Thermal resistance junction-ambient

RθJA

IDM

PD

PD

Total power dissipation

TA = 70°C (Note 1)

TA = 25°C (Note 1)

Pulsed drain current

Continuous drain current

VGS = -10V, TA = 25°C (Note 1)

VGS = -10V, TA = 70°C (Note 1)

(Note 1)

(Note 2)

ID

ID

-60

±20

-3.2

-2.6

-13

0.9

0.6

137

V

A

W

A

°C/W

Continuous body diode forward current

IS

TA = 25°C

-0.8

A

Pulsed body diode forward current

ISM

TA = 25°C

-3.2

A

TJ, TSTG

Operating junction and storage temperature range

-55 to +150

°C

Notes:

2. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.

1. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C.

The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C.

The value in any given application depends on the user’s specific board design.

Dimensions in inches and (millimeter)

SOT-23-3L

D

G

S

0.067(1.70)

0.059(1.50)

0.119(3.02)

0.111(2.82)

0.079(2.00)

0.045(1.15)

0.041(1.05)

0.004(0.10)

0.000(0.00)

0.024(0.60)

0.008(0.20)

0.004(0.10)

0.116(2.95)

0.104(2.65)

0.020(0.50)

0.012(0.30)

0.012(0.30)

0.071(1.80)