CMS80N06DA-HF datasheet(4/7 Pages) COMCHIP

4 / 7 page

Fig.9 - Forward Transfer Admittance

vs Drain Current

Drain Current, ID (A)

0.001

0.1

100

0.1

0.01

100

MOSFET

Comchip Technology CO., LTD.

REV:A

Page 4

Fig.8 - Threshold Voltage

vs Junction Temperature

Junction Temperature, TJ (°C)

-75 -50 -25

25 50 75 100 125 150 175

0.6

0.8

1.0

1.2

1.4

Fig.7 - Capacitance vs Drain-to-Source

Voltage

Drain-Source Voltage, VDS (V)

100

0.4

10000

Fig.10 - Gate Charge Characteristics

Total Gate Charge, Qg (nC)

Junction Temperature, TJ (°C)

Fig.12 - Maximum Drain Current vs

Junction Temperature

100

125

150

175

Drain-Source Voltage, VDS (V)

Fig.11 - Maximum Safe Operating Area

0.1

100

0.01

0.1

0.01

100

Ciss

Crss

Coss

ID=1mA

ID=250µA

VDS=30V

ID=20A

VGS=10V

RθJA=35°C/W

QW-JTR251

Typical Rating and Characteristic Curves (CMS80N06DA-HF)

1000

Ta=25°C

Pulsed

VDS=10V

VDS=5V

RDSON

Limited

TA=25°C, TJ=150°C

VGS=10V, RθJA=35°C/W

Single pulse

100ms

10ms

1ms

100µs

10s

CMS80N06DA-HF Datasheet(PDF) 4 Page - Comchip Technology

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