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ISG2118 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2118
Description  Trench Field-Stop IGBT
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2118 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2118 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2118 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2118 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISG2118 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2118
eq IHW40N65R5
Trench Field-Stop IGBT
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC= 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
BVCES
Collector-Emitter Breakdown
Voltage
VGE=0, IC= 0.25mA
650
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC= 0.25mA
3.8
--
5.8
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 48A, VCE= 15V
--
--
1.8
V
ICES
Zero Gate Voltage Collector Current VCE= 650V, VGE=0
--
--
25
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
100
nA
Cies
Input Capacitance
VCE= 25V,
VGE= 0V,
f=1MHZ
--
8755
--
pF
Coes
Output Capacitance
--
245
--
pF
Cres
Reverse Transfer Capacitance
--
125
--
pF
DIODE CHARACTERISTICS ( TC=25℃ unless otherwise noted)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VF
Diode Forward Voltage
IF=40A
--
1.58
2.2
V
trr
Diode Reverse Recovery Time
VR=400V,IF=40A,
dIF/dt=350A/us
--
116.8
--
ns
Irr
Diode peak Reverse Recovery
Current
--
6.36
--
A
Qrr
Diode Reverse Recovery Charge
--
313.8
--
nC



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