NP16N06QLK

R07DS1290EJ0200 Rev. 2.00

Page 3 of 7

May 24, 2018

Electrical Characteristics (TA = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

1

A

VDS = 60 V, VGS = 0 V

Gate Leakage Current

IGSS

±10

A

VGS = ±20 V, VDS = 0 V

Gate to Source Threshold Voltage

VGS(th)

1.5

2.1

2.5

V

VDS = VGS, ID = 250

A

Forward Transfer Admittance 1

| yfs |

5

13

S

VDS = 5 V, ID = 8 A

Drain to Source On-state

Resistance 1

RDS(on)1

30

39

m



VGS = 10 V, ID = 8 A

RDS(on)2

38

60

m



VGS = 4.5 V, ID = 4 A

Input Capacitance *2

Ciss

500

750

pF

VDS = 25 V,

VGS = 0 V,

f = 1 MHz

Output Capacitance *2

Coss

50

75

pF

Reverse Transfer Capacitance *2

Crss

30

54

pF

Turn-on Delay Time *2

td(on)

15

30

ns

VDD = 30 V, ID = 8 A,

VGS = 10 V,

RG = 0



Rise Time *2

tr

5

13

ns

Turn-off Delay Time *2

td(off)

30

60

ns

Fall Time *2

tf

3

8

ns

Total Gate Charge *2

QG

11

17

nC

VDD = 48 V,

VGS = 10 V,

ID = 16 A

Gate to Source Charge

QGS

3

nC

Gate to Drain Charge

QGD

3

nC

Body Diode Forward Voltage 1

VF(S-D)

0.9

1.5

V

IF = 16 A, VGS = 0 V

Reverse Recovery Time

trr

20

ns

IF = 16 A, VGS = 0 V,

di/dt = 100 A/

s

Reverse Recovery Charge

Qrr

16

nC

Note:

*1. Pulsed test

Note:

*2. Not subject of production test. Verified by design/characterization.