USBULC6-2M6 datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

USBULC6-2M6

2/10

Characteristics

Table 1.

Absolute ratings

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

IEC 61000-4-2 air discharge

IEC 61000-4-2 contact discharge

MIL STD883G-Method 3015-7

±15

±25

Tstg

Storage temperature range

-55 to +150

°C

Maximum junction temperature

150

°C

Lead solder temperature (10 seconds duration)

260

°C

Table 2.

Electrical characteristics (Tamb = 25 °C)

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max

IRM

Leakage current

VRM = 5 V

0.5

µA

VBR

Breakdown voltage between VBUS

and GND

IR = 1 mA

VCL

Clamping voltage

IPP = 1 A, tp = 8/20 µs

Any I/O pin to GND

IPP = 5 A, tp = 8/20 µs

Any I/O pin to GND

Ci/o-GND

Capacitance between I/O and GND

VR = 0 V, F = 1 MHz

Any I/O pin to ground

0.95

1.1

VR = 0 V, F = 240 MHz

Any I/O pin to ground

0.65

0.85

ΔCi/o-GND

Capacitance variation between I/O

and GND

VR = 0 V, F = 1 MHz

Any I/O pin to ground

0.020

Ci/o-i/o

Capacitance between I/O

VR = 0 V, F = 1 MHz

Ground not connected

0.5

0.55

VR = 0 V, F = 240 MHz

Ground not connected

0.35

0.4

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