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CLA30E1200PC Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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CLA30E1200PC Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Thyristor CLA30E1200PC www.iscsemi.com 1 FEATURES · High Efficiency Thyristor · Thyristor for line frequency · Planar passivated chip APPLICATIONS · DC Motor control · Power converter · AC power control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM Repetitive peak off-state voltage 1200 V VRRM Repetitive peak off-state voltage 1200 V ITAV average forward current,TC=115℃,TVJ=150℃ 30 A IT(RMS) RMS forward current,180°sine 47 A ITSM max. forward surge current 10ms,50Hz,sine,TVJ=45℃ 300 A 10ms,50Hz,sine,TVJ=150℃ 255 A I2t I2t value for fusing 10ms,50Hz,sine,TVJ=45℃ 450 A2S 10ms,50Hz,sine,TVJ=150℃ 325 A2S Ptot) total power dissipation 250 W Tvj virtual junction temperature -40~150 ℃ Tstg Storage temperature -40~150 ℃ (dV/dt)cr critical rate of rise of voltage,V=2/3VDRM,RGK= ∞ ,TVJ=150℃ method 1 (linear voltage rise) 500 V/us (di/dt)cr critical rate of rise of current, TVJ=150℃,f=50Hz,tp=200us,diG/dt=0.3A/us,IG=0.3A,V=2/3VDRM, nono-repetitive IT=30A 500 A/us RθJC Thermal Resistance, Junction−to−Case 0.5 ℃ /W |
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