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IXFN180N25T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN180N25T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc N-Channel MOSFET Transistor IXFN180N25T www.iscsemi.com 1 FEATURES · Drain Current -ID=168A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 12.9mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC converters · DC choppers · Battery chargers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 168 A IDM Drain Current-Single Pluse pulse width limited by TJM 500 A PD Total Dissipation 900 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ VISOL 50/60Hz,RMS,IISOL≤1mA，1min 2500 V~ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.14 ℃ /W |
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